Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5 as the Buffer Layer

Hoon Sang Choi; Kun Sang Park; Yong Tae Kim; In-Hoon Choi

doi:https://doi.org/10.7567/SSDM.2000.C-4-6

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[C-4-6] Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5 as the Buffer Layer

Hoon Sang Choi、Kun Sang Park、Yong Tae Kim、In-Hoon Choi (1.Department of Materials Science and Engineering, Korea University、2.Semiconductor Device Lab., Korea Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2000.C-4-6

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