Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide

M. Arai; T. Hashidzume; T. Nitta; Y. Odake; I. Matsuo

doi:https://doi.org/10.7567/SSDM.2000.C-6-2

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[C-6-2] Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide

M. Arai, T. Hashidzume, T. Nitta, Y. Odake, I. Matsuo (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.2000.C-6-2

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