[C-6-3] Simulation of Positive Oxide Trapped Charge Induced Leakage Current and Read-Disturb in Flash EEPROMs

N. K. Zous、C. W. Tsai、L. P. Chiang、C. C. Yeh、Tahui Wang (1.Department of Electronics Engineering, National Chiao-Tung University)

https://doi.org/10.7567/SSDM.2000.C-6-3