[D-2-7] Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

A. KOHNO、H. MURAKAMI、M. IKEDA、H. NISHIYAMA、S. MIYAZAKI、M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.2000.D-2-7