Superlattice- and Ultrashort-Channel Field Effect Transistors Fabricated by Cleaved Edge Overgrowth

R. A. Deutschmann; W. Wegscheider; F. Ertl; T. Asperger; M. Rother; M. Bichler; G. Abstreiter

doi:https://doi.org/10.7567/SSDM.2000.D-4-1

[D-4-1] Superlattice- and Ultrashort-Channel Field Effect Transistors Fabricated by Cleaved Edge Overgrowth

R. A. Deutschmann、W. Wegscheider、F. Ertl、T. Asperger、M. Rother、M. Bichler、G. Abstreiter (1.Walter Schottky Institut, Technische Universitat Munchen、2.Institut fur Angewandte und Experimentelle Physik Universitat Regensburg)

https://doi.org/10.7567/SSDM.2000.D-4-1

2000 International Conference on Solid State Devices and Materials

[D-4-1] Superlattice- and Ultrashort-Channel Field Effect Transistors Fabricated by Cleaved Edge Overgrowth