Three-Dimensional Capacitance Analysis in an SRAM Cell

Yoshiaki Takemura; Ken-ichi Osada; Masayoshi Yagyu; Ken Yamaguchi; Jiro Ushio; Takuya Maruizumi

doi:https://doi.org/10.7567/SSDM.2000.E-5-5

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[E-5-5] Three-Dimensional Capacitance Analysis in an SRAM Cell

Yoshiaki Takemura, Ken-ichi Osada, Masayoshi Yagyu, Ken Yamaguchi, Jiro Ushio, Takuya Maruizumi (1.Advanced Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.2000.E-5-5

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