A Vertical, MOS-Based Silicon Tunneling Transistor

W. Hansch; J. Schulze; C. Fink; I. Eisele

doi:https://doi.org/10.7567/SSDM.2000.LD-1-1

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[LD-1-1] A Vertical, MOS-Based Silicon Tunneling Transistor

W. Hansch、J. Schulze、C. Fink、I. Eisele (1.Department of Electrical Engineering, Technical University of Munich、2.Institute of Physics, University of the German Federal Armed Forces)

https://doi.org/10.7567/SSDM.2000.LD-1-1

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