A Vertical, MOS-Based Silicon Tunneling Transistor

W. Hansch; J. Schulze; C. Fink; I. Eisele

doi:https://doi.org/10.7567/SSDM.2000.LD-1-1

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[LD-1-1] A Vertical, MOS-Based Silicon Tunneling Transistor

W. Hansch, J. Schulze, C. Fink, I. Eisele (1.Department of Electrical Engineering, Technical University of Munich, 2.Institute of Physics, University of the German Federal Armed Forces)

https://doi.org/10.7567/SSDM.2000.LD-1-1

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