[LE-2-6] Sub-2nm Equivalent SiO2 Thickness Ta2O5 for Gate Dielectric Using RTA + UV/O3

Akihisa Yamaguchi, Takayuki Aoyama, Toshihiro Sugii (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.2000.LE-2-6