Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM&apos;s Contact Process

Yoshihiro Ogawa; Hisashi Okuchi; Hiroshi Tomita; Kunihiro Miyazaki; Kazuhiko Takase; Soichi Nadahara

doi:https://doi.org/10.7567/SSDM.2001.A-2-2

[A-2-2] Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM's Contact Process

Yoshihiro Ogawa, Hisashi Okuchi, Hiroshi Tomita, Kunihiro Miyazaki, Kazuhiko Takase, Soichi Nadahara (1.Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company)

https://doi.org/10.7567/SSDM.2001.A-2-2

2001 International Conference on Solid State Devices and Materials

[A-2-2] Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM's Contact Process