Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM&apos;s Contact Process

Yoshihiro Ogawa; Hisashi Okuchi; Hiroshi Tomita; Kunihiro Miyazaki; Kazuhiko Takase; Soichi Nadahara

doi:https://doi.org/10.7567/SSDM.2001.A-2-2

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜 2001年9月28日
Diamond Hotel, Tokyo, Japan

[A-2-2] Spin-Drying with CO2 Gas Purge for 0.13 μm DRAM's Contact Process

Yoshihiro Ogawa、Hisashi Okuchi、Hiroshi Tomita、Kunihiro Miyazaki、Kazuhiko Takase、Soichi Nadahara (1.Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company)

https://doi.org/10.7567/SSDM.2001.A-2-2

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