[A-3-3] Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond
W. H. Lin, K. L. Pey, Z. Dong, S. Y. M. Chooi, M. S. Zhou, T. C. Ang, C. H. Ang, W. S. Lau
(1.Department of Electrical and Computer Engineering, National University of Singapore, 2.Technology Development, Chartered Semiconductor Manufacturing Ltd.)
https://doi.org/10.7567/SSDM.2001.A-3-3