Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond

W. H. Lin; K. L. Pey; Z. Dong; S. Y. M. Chooi; M. S. Zhou; T. C. Ang; C. H. Ang; W. S. Lau

doi:https://doi.org/10.7567/SSDM.2001.A-3-3

[A-3-3] Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond

W. H. Lin, K. L. Pey, Z. Dong, S. Y. M. Chooi, M. S. Zhou, T. C. Ang, C. H. Ang, W. S. Lau (1.Department of Electrical and Computer Engineering, National University of Singapore, 2.Technology Development, Chartered Semiconductor Manufacturing Ltd.)

https://doi.org/10.7567/SSDM.2001.A-3-3

2001 International Conference on Solid State Devices and Materials

[A-3-3] Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond