[A-4-1] Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation

Naoki Ueda, Yuji Saito, Masaki Hirayama, Yoshimitsu Yamauchi, Shigetoshi Sugawa, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.Process Development Laboratory, Sharp Corporation, 3.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2001.A-4-1