[A-4-3] Improved Transconductance and Gate Insulator Integrity of MISFETs with Si3N4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃

Ichiro Ohshima, Hiroyuki Shimada, Shin-ichi Nakao, Weitao Cheng, Yasuhiro Ono, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Device Development Group, SEIKO EPSON Corporation, 3.New Industry Creation Hatchery Center, Tohoku University, 4.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

https://doi.org/10.7567/SSDM.2001.A-4-3