[A-4-5] A Study on the Germano-Silicide Formation in the Ni/Si1-xGex System for CMOS Device Applications

Hyo-Jick Choi、Dae-Hong Ko、Ja-Hum Ku、Chul-Joon Choi、Siyoung Choi、Kazuyuki Fujihara、Ho-Kyu Kang Cheol-Woong Yang (1.Department of Ceramic Engineering, Yonsei University、2.Process Development Team Semiconductor R&D Division Samsung Electronics Co.、3.School of Metallurgical and Materials Engineering, Sungkyunkwan University)

https://doi.org/10.7567/SSDM.2001.A-4-5