[A-6-6] New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide

Seong-Ho Kim, Sung-Hoan Kim, Sung-Eun Kim, Myung-Soo Kim, Joo-Han Park, Eun-Soo Kim (1.LDI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2001.A-6-6