[A-6-6] New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide

Seong-Ho Kim、Sung-Hoan Kim、Sung-Eun Kim、Myung-Soo Kim、Joo-Han Park、Eun-Soo Kim (1.LDI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2001.A-6-6