Intrinsic Junction Leakage by Co In-Diffusion during CoSi2 Formation Characterized with Damage Free n+/p Silicon Diodes

Masakatsu Tsuchiaki; Kazuya Ohuchi

doi:https://doi.org/10.7567/SSDM.2001.B-5-2

[B-5-2] Intrinsic Junction Leakage by Co In-Diffusion during CoSi2 Formation Characterized with Damage Free n+/p Silicon Diodes

Masakatsu Tsuchiaki, Kazuya Ohuchi (1.Corporate Research & Development Center, Toshiba Corporation, 2.System LSI Research & Development Center, Toshiba Semiconductor Company)

https://doi.org/10.7567/SSDM.2001.B-5-2

2001 International Conference on Solid State Devices and Materials

[B-5-2] Intrinsic Junction Leakage by Co In-Diffusion during CoSi2 Formation Characterized with Damage Free n+/p Silicon Diodes