[B-5-2] Intrinsic Junction Leakage by Co In-Diffusion during CoSi2 Formation Characterized with Damage Free n+/p Silicon Diodes
Masakatsu Tsuchiaki、Kazuya Ohuchi
(1.Corporate Research & Development Center, Toshiba Corporation、2.System LSI Research & Development Center, Toshiba Semiconductor Company)
https://doi.org/10.7567/SSDM.2001.B-5-2