Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface

Tomohiro Nakamura; Kyoko Nishizaki; Keisuke Takahashi; Hiroshi Nohira; Takeo Hattori

doi:https://doi.org/10.7567/SSDM.2001.B-6-2

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜 2001年9月28日
Diamond Hotel, Tokyo, Japan

[B-6-2] Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface

Tomohiro Nakamura、Kyoko Nishizaki、Keisuke Takahashi、Hiroshi Nohira、Takeo Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

https://doi.org/10.7567/SSDM.2001.B-6-2

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