[B-8-2] Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures
Keiko Kushida-Abdelghafar, Kikuo Watanabe, Takeshi Kikawa, Yoshiaki Kamigaki, Eiichi Murakami
(1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor and Integrated circuits Division, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.2001.B-8-2
