[B-8-2] Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures

Keiko Kushida-Abdelghafar、Kikuo Watanabe、Takeshi Kikawa、Yoshiaki Kamigaki、Eiichi Murakami (1.Central Research Laboratory, Hitachi, Ltd.、2.Semiconductor and Integrated circuits Division, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.2001.B-8-2