[B-8-3] Physical and Electrical Characteristics of Poly-Si/ZrO2/SiO2/Si MOS Structures

Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho, Joong-Jung Kim, Jun-Mo Yang, Il-Sang Choi, Jung-Kyu Ko, Jae-Young Kim, In-Seok Yeo, Jin Won Park, Hee-Koo Yoon (1.Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.)

https://doi.org/10.7567/SSDM.2001.B-8-3