[B-8-3] Physical and Electrical Characteristics of Poly-Si/ZrO2/SiO2/Si MOS Structures

Kwan-Yong Lim、Dae-Gyu Park、Heung-Jae Cho、Joong-Jung Kim、Jun-Mo Yang、Il-Sang Choi、Jung-Kyu Ko、Jae-Young Kim、In-Seok Yeo、Jin Won Park、Hee-Koo Yoon (1.Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.)

https://doi.org/10.7567/SSDM.2001.B-8-3