[B-9-1] Low Leakage La2O3 Gate Insulator Film with EOTs of 0.8-1.2 nm S. Ohmi, C. Kobayashi, E. Tokumitsu, H. Ishiwara, H. Iwai (1.Tokyo Institute of Technology) https://doi.org/10.7567/SSDM.2001.B-9-1