PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing

Shin-Ichi Nakao; Munekatsu Nakagawa; Ichiro Ohshima; Hiroyuki Shimada; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2001.B-9-4

[B-9-4] PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing

Shin-Ichi Nakao, Munekatsu Nakagawa, Ichiro Ohshima, Hiroyuki Shimada, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2001.B-9-4

2001 International Conference on Solid State Devices and Materials

[B-9-4] PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing