[C-1-2] Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo (1.Research Centre for Micro-Structure Devices, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2001.C-1-2