[C-4-3] The Influence of the Device Miniaturization on the Ion Enhancement in the Intrinsic Silicon Body (i-body) SOI-MOSFET's

Risho Koh, Hisashi Takemura, Kiyoshi Takeuchi, Tohru Mogami (1.Silicon Systems Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2001.C-4-3