[C-8-2] Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM

Y. J. Song、N. W. Jang、D. J. Jung、H. H. Kim、H. J. Joo、S. Y. Lee、K. M. Lee、S. H. Joo、S. O. Park、Kinam Kim (1.Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2001.C-8-2