[C-9-3] Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices
Eli Lusky, Yosi Shacham-Diamand, Ilan Bloom Boaz Eitan
(1.Ph. D Student, Tel-Aviv University, Dept. of Physical Electronics, 2.Saifun Semiconductors Ltd.)
https://doi.org/10.7567/SSDM.2001.C-9-3
