Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices

Eli Lusky; Yosi Shacham-Diamand; Ilan Bloom Boaz Eitan

doi:https://doi.org/10.7567/SSDM.2001.C-9-3

[C-9-3] Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices

Eli Lusky、Yosi Shacham-Diamand、Ilan Bloom Boaz Eitan (1.Ph. D Student, Tel-Aviv University, Dept. of Physical Electronics、2.Saifun Semiconductors Ltd.)

https://doi.org/10.7567/SSDM.2001.C-9-3

2001 International Conference on Solid State Devices and Materials

[C-9-3] Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices