Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs

Kazuo Tsutsui; Toshiaki Terayama; Hiroshi Sekine; Hiroshi Kambayashi

doi:https://doi.org/10.7567/SSDM.2001.D-10-4

2001 International Conference on Solid State Devices and Materials

Sep 26, 2001 - Sep 28, 2001
Diamond Hotel, Tokyo, Japan

[D-10-4] Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs

Kazuo Tsutsui, Toshiaki Terayama, Hiroshi Sekine, Hiroshi Kambayashi (1.Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering)

https://doi.org/10.7567/SSDM.2001.D-10-4

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