The Japan Society of Applied Physics

[D-5-5] Characterization of Tunnel-Barriers in Polycrystalline Si Point-Contact Single-Electron Transistors

Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y. T. Tan, Z. A. K. Durrani, K. Taniguchi (1.Hitachi Cambridge Laboratory, Hitachi Europe Ltd., 2.Microelectronics Research Centre, University of Cambridge, 3.Dept. of Electronics and Information Systems, Osaka University, 4.CREST, JST(Japan Science and Technology))

https://doi.org/10.7567/SSDM.2001.D-5-5