[D-5-6] Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures

M. IKEDA、E. YOSHIDA、A. KOHNO、S. MIYAZAKI、M. HIROSE (1.Department of Electrical Engineering, Hiroshima University、2.Department of Applied Physics, Fukuoka University、3.National Institute of Advanced Industrial Science and Technology (AIST) Advanced Semiconductor Research Center)

https://doi.org/10.7567/SSDM.2001.D-5-6