Robust 0.13-μm Gate HJFET with Low Fringing Capacitance

Takashi Inoue; Akio Wakejima; Katsumi Yamanoguchi; Norihiko Samoto

doi:https://doi.org/10.7567/SSDM.2001.E-5-2

2001 International Conference on Solid State Devices and Materials

Sep 26, 2001 - Sep 28, 2001
Diamond Hotel, Tokyo, Japan

[E-5-2] Robust 0.13-μm Gate HJFET with Low Fringing Capacitance

Takashi Inoue, Akio Wakejima, Katsumi Yamanoguchi, Norihiko Samoto (1.Photonic and Wireless Devices Research Labs., 2.R&D Technical Support Center, NEC Corporation)

https://doi.org/10.7567/SSDM.2001.E-5-2

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