[E-5-3] Lateral p-n Junction in High Electron-Mobility Structure
B. Kaestner、D. G. Hasko、D. A. Williams
(1.Microelectronics Research Centre, Cavendish Laboratory、2.Hitachi Cambridge Laboratory, Cavendish Laboratory)
https://doi.org/10.7567/SSDM.2001.E-5-3