Lateral p-n Junction in High Electron-Mobility Structure

B. Kaestner; D. G. Hasko; D. A. Williams

doi:https://doi.org/10.7567/SSDM.2001.E-5-3

2001 International Conference on Solid State Devices and Materials

Sep 26, 2001 - Sep 28, 2001
Diamond Hotel, Tokyo, Japan

[E-5-3] Lateral p-n Junction in High Electron-Mobility Structure

B. Kaestner, D. G. Hasko, D. A. Williams (1.Microelectronics Research Centre, Cavendish Laboratory, 2.Hitachi Cambridge Laboratory, Cavendish Laboratory)

https://doi.org/10.7567/SSDM.2001.E-5-3

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