[E-5-3] Lateral p-n Junction in High Electron-Mobility Structure
B. Kaestner, D. G. Hasko, D. A. Williams
(1.Microelectronics Research Centre, Cavendish Laboratory, 2.Hitachi Cambridge Laboratory, Cavendish Laboratory)
https://doi.org/10.7567/SSDM.2001.E-5-3