InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates

Sung-June Jo; Jeong Hoon Kim; Sang-Soon Kim; Jong-In Song

doi:https://doi.org/10.7567/SSDM.2001.E-5-5

[E-5-5] InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates

Sung-June Jo、Jeong Hoon Kim、Sang-Soon Kim、Jong-In Song (1.Department of Information and Communications, K-JIST、2.R&D Group1, Mobile Communication Division, Samsung Electronics)

https://doi.org/10.7567/SSDM.2001.E-5-5

2001 International Conference on Solid State Devices and Materials

[E-5-5] InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates