[F-1-2] Saturation Phenomenon of Stress Induced Gate Leakage Current S. Ueno、T. Kuroi、A. Teramoto、H. Umeda、Y. Inoue、M. Inuishi (1.ULSI Development Center, Mitsubishi Electric Corporation) https://doi.org/10.7567/SSDM.2001.F-1-2