[F-1-2] Saturation Phenomenon of Stress Induced Gate Leakage Current S. Ueno, T. Kuroi, A. Teramoto, H. Umeda, Y. Inoue, M. Inuishi (1.ULSI Development Center, Mitsubishi Electric Corporation) https://doi.org/10.7567/SSDM.2001.F-1-2