80 nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide

K. Ota; H. Sayama; H. Oda; Y. Inoue; M. Inuishi H. Nakaoka; K. Nakanishi; G. Fuse; A. Kajiya; M. Ogura

doi:https://doi.org/10.7567/SSDM.2001.F-2-2

[F-2-2] 80 nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide

K. Ota, H. Sayama, H. Oda, Y. Inoue, M. Inuishi H. Nakaoka, K. Nakanishi, G. Fuse, A. Kajiya, M. Ogura (1.ULSI Development Center, Mitsubishi Electric Corporation, 2.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Corporation)

https://doi.org/10.7567/SSDM.2001.F-2-2

2001 International Conference on Solid State Devices and Materials

[F-2-2] 80 nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide