Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current

Shin-ichi Takagi; Mariko Takayanagi

doi:https://doi.org/10.7567/SSDM.2001.F-4-2

[F-4-2] Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current

Shin-ichi Takagi、Mariko Takayanagi (1.Advanced LSI Technology Laboratory, Toshiba Corporation、2.System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2001.F-4-2

2001 International Conference on Solid State Devices and Materials

[F-4-2] Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current