Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology

Suk-Kang Sung; Jae-Sung Sim; Dae Hwan Kim; Jong Duk Lee; Byung-Gook Park

doi:https://doi.org/10.7567/SSDM.2001.P-1-17

[P-1-17] Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology

Suk-Kang Sung、Jae-Sung Sim、Dae Hwan Kim、Jong Duk Lee、Byung-Gook Park (1.Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2001.P-1-17

2001 International Conference on Solid State Devices and Materials

[P-1-17] Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology