Strained Si- and SiGe-On-Insulator (Strained SOI and SGOI) MOSFETs as New Device Options for High Performance CMOS

Shin-ich Takagi

doi:https://doi.org/10.7567/SSDM.2002.A-1-1

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[A-1-1] Strained Si- and SiGe-On-Insulator (Strained SOI and SGOI) MOSFETs as New Device Options for High Performance CMOS

Shin-ich Takagi (1.MIRAI-Project, Association of Super-Advanced Electronics Technology (ASET) Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.A-1-1

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