[A-1-2] Enhanced performance from SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10μm x 10μm Si Pillars

A. M. Waite、U. N. Straube、N. S. Lloyd、S. G. Croucher、Y. T. Tang、B. Rong、A. G. R. Evans、T. J. Grasby、M. Myronov、T. E. Whall、E. H. C. Parker、D. J. Norris、A. G. Cullis (1.University of Southampton, Dept. of Electronics and Computer Science、2.University of Warwick, Dept of Physics、3.University of Sheffield, Department of Electronic & Electrical Engineering)

https://doi.org/10.7567/SSDM.2002.A-1-2