[A-3-4] An Electrostatic-Discharge(ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor(DET) for RF-CMOS IC's

T. Ohnakado、S. Yamakawa、A. Furukawa、K. Nishikawa、T. Murakami、Y. Hashizume、K. Sugahara、N. Suematsu、T. Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Information Technology R&D Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2002.A-3-4