[A-3-4] An Electrostatic-Discharge(ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor(DET) for RF-CMOS IC's
T. Ohnakado, S. Yamakawa, A. Furukawa, K. Nishikawa, T. Murakami, Y. Hashizume, K. Sugahara, N. Suematsu, T. Oomori
(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Information Technology R&D Center, Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.2002.A-3-4
