The Japan Society of Applied Physics

[A-4-1] MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

E. A. Fitzgerald, M. L. Lee, C. W. Leitz, D. A. Antoniadis, A. Lochtefeld, R. Hammond, M. T. Currie, G. Braithwaite, F. Singaporewala, J. Yap, C. J. Vineis, N. D. Gerrish, R. Westhoff, M. T. Bulsara, J. H. Ho, J. R. Hwang, Y. S. Hsieh, T. P. Chen, Anthony Lee, T. Y. Chen, W. Y. Hsieh, P. W. Yen, W. T. Shiau, Y. T. Loh, S. C. Chien, Frank Wen (1.MIT, Department of Materials Science and Engineering, 2.Department of EECS, 3.AmberWave Systems Corporation, 4.UMC)